Global NAND Flash Memory Controller Market Research Report

Market Overview

The latest research on the global NAND flash memory controller market indicates that the global NAND flash memory controller market size will reach US$5,146.05 million in 2022. The market is expected to reach US$7,283.25 million in 2028 with a CAGR of 5.96% of the time estimate.

Market Trends

As mobile devices become more integrated into people’s daily lives, the volume of digital data is predicted to increase at a rate, and digital solutions continue to transform applications. In addition, with the rise of 5G technology, the development of international data capacity will not be expected to cause a disruption. Other estimates of the NAND flash around the near-identity of a cell, and the use of quad-level cell NAND with four bpcs has helped the line over the past few years keep its technology ahead of the competition, for example Intel’s production of 3D NAND Flash, in 2023 It uses a double layer process that will increase to 196 layers.

Market Drivers

Along with the demand for memory devices, the demand for memory in data centres is expected to drive the growth of the NAND flash memory market. In addition, the large-scale operation of computing and the growing need for edge applications, cloud applications and big data are driving demand for data centers.

The growth of machine learning and artificial intelligence is driving marketers to choose larger, faster data sources. The rapid adoption of remote work, education and online healthcare during the pandemic has fuelled this growth.

Market Restraints

The reliability of data storage is the improvement of all storage devices. Flash memory is subject to a phenomenon called bit flipping, where several bits are reversed, which is more common in NAND Flash than NOR Flash. However, it is expected to hinder the growth of global NAND FLASH MEMORY because of the expected benefits. That’s why the negative control is a unique feature of NAND Flash. Conversely, NOR flash is delivered with zero bad blocks and writes very few bad blocks over the life of the memory.

Therefore, NOR flash memory can outperform NAND flash memory when reliability of data storage is an issue, which is expected to hinder the growth of the global NAND flash memory technology business.

Market Opportunities

A larger capacity compared to QLC NAND Flash, also known as Twin BiCS Flash, it is the world’s first 3D semi-circular diversified gate flash memory cell model.

The technology enables memory chips to have smaller cells and larger storage, and this is expected to benefit the global NAND flash memory industry. The new technology of the Twin BiCS Flash is still a new area of research and development and will be applied in the future. Since BiCS 128-layer NAND flash chips are scheduled for release in 2020, manufacturers such as SK Hynix and Samsung crossed 100-layer with 128-layer 4D NAND and V-NAND v6 in 2019.

Market Challenges

Storage is a small but important component of the large systems that make up communications; failure in any subsystem can cause failure. Non-volatile memory has become the central medium for system-wide code and data storage, meaning service providers voluntarily rely on vendors to provide long-term support for legacy and new interfaces.

COVID-19 Analysis

The electronics industry is expected to be heavily impacted by the COVID-19 outbreak, as China is one of the largest exporters of raw materials and finished products. The industry faces production disruptions, supply chain disruptions and price volatility. Sales of well-known electronics companies were affected during this period.

Restrictions on the movement of workers and goods hinder the growth of the economy in the short run.

Market Size and Segmentation

  1. By Type:
  2. SLC (One Bit Per Cell)
  3. MLC (Two Bit Per Cell)
  4. TLC (Three Bit Per Cell)
  5. QLC (Quad Level Cell)

TLC (Tertiary Cell) has the largest market share and is expected to grow with a YBBO of 3.61% of the time estimate. TLC flash memory includes solid state drives (SSDs) for business and home use, memory cards and USB drives for digital cameras and mobile phones. TLC memory typically costs less per gigabyte (GB) than SLC and MLC flash, which store two bits of data per cell. NAND flash manufacturers often use TLC with 3D NAND flash, where memory cells are stacked vertically on a chip.

  • By Structure:
  • 2-D Structure
  • 3-D Structure

3D structures make up the bulk of the market and are expected to grow with a CAGR of 8.51% over the forecast period. The business landscape has changed with the introduction of 3D NAND flash memory.

Batteries can now be placed vertically, increasing the storage capacity. These additional layers provide excellent storage capacity without sacrificing battery life. 3D NAND memory has many advantages over 2D NAND flash. It has a longer life, faster operation and less effort.

  • By Application:
  • Smartphone
  • SSD
  • Memory Card
  • Tablet
  • Other Applications

Smartphone segments and is expected to grow with a 6.57% CAGR over the forecast period. One of the important features of today’s smartphones is flash memory. The demand for NAND memory has increased due to the average capacity of the smartphone. In smartphones, NAND flash can speed up web browsing, email downloads, games and even social media.

The developers combined technologies such as navigation control, fingerprint and GPS. Therefore, smartphones have more demand for NAND flash memory.

  • By Geography:
  • North America
  • U.S.
  • Canada
  • Latin America
  • Brazil
  • Argentina
  • Mexico
  • Rest of Latin America
  • Europe
  • Germany
  • U.K.
  • Spain
  • France
  • Italy
  • Russia
  • Rest of Europe
  • Asia Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
  • Rest of Asia Pacific
  • Middle East
  • GCC Countries
  • Israel
  • Rest of Middle East
  • Africa
  • South Africa
  • North Africa
  • Central Africa

Asia Pacific is gaining market share and is forecast to grow at a CAGR of 7.12 over the forecast period. China’s broad involvement is one of the main reasons for the region’s control of the market. Many global memory companies have invested heavily in the Chinese market. It is supported by government initiatives such as Made in China 2025.

The demand for almost all end-user apps in the region is very high, mainly because of the demand for smartphones in many developing countries like China, India, Indonesia and so on. In addition, the number of SMEs and cloud service providers has increased over the past three years, creating growth potential across the region.

North America holds the second largest market and is expected to reach $27 million by 2030 with a YBBO of 5,230. North America is an important market for consumer electronics, IoT, SSD and smartphones.

This product increases the demand for NAND flash memory. SanDisk, Intel. WDC, Cypress Semiconductors and other major companies in North America. The growing market for automotive ADAS systems drives the need for high-density and low-latency flash memory.

Demand for NAND flash solutions in Europe will be driven by the expanding data-centric applications of NAND flash.

Due to the rapidly increasing demand from the IT industry in the region, NAND flash memory needs to be used in many creative ways. For this reason. These trends are expected to drive the expansion of the NAND flash memory market over the forecast period. Also, the automobile industry is important in Europe. These companies spend a lot of money developing self-driving cars.

These cars need a lot of information to work. ADAS collects data. For efficient operation, automakers use NAND flash memory.

Key Competitors

  • Samsung Electronics Co. Ltd
  • SK Hynix Inc.
  • KIOXIA Corporation
  • SanDisk Corp.
  • Cypress Semiconductor Corporation
  • Powerchip Technology Corporation
  • Micron Technology Inc.
  • Yangtze Memory Technologies
  • Intel Corporation